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| RF2333 4 Typical Applications * Broadband, Low Noise Gain Blocks * IF or RF Buffer Amplifiers * Driver Stage for Power Amplifiers * Final PA for Low Power Applications * Broadband Test Equipment GENERAL PURPOSE AMPLIFIER Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 input and output impedances and requires only two external DC biasing elements to operate as specified. The RF2333 is available in a very small industry-standard SOT23 5-lead surface mount package, enabling compact designs which conserve board space. 1.60 + 0.01 0.400 1 4 GENERAL PURPOSE AMPLIFIERS 0.15 0.05 2.90 + 0.10 0.950 2.80 + 0.20 3 MAX 0 MIN 0.45 + 0.10 0.127 1.44 1.04 Dimensions in mm. Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS u Package Style: SOT 5 Lead GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features * DC to 6000MHz Operation * Internally matched Input and Output * 10dB Small Signal Gain * +34dBm Output IP3 * +18.5dBm Output Power * Good Gain Flatness GND 1 GND 2 RF IN 3 5 RF OUT 4 GND Ordering Information RF2333 RF2333 PCBA General Purpose Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A5 010228 4-137 RF2333 Absolute Maximum Ratings Parameter Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Rating 120 +20 -40 to +65 -60 to +150 Unit mA dBm C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall Specification Min. Typ. Max. DC to 6000 6 11.2 11 10.4 10.2 10 9.2 8.3 0.4 8.2 1.7:1 1.7:1 +34.5 +18.5 17 5.0 5.5 70 6.0 Unit MHz GHz dB dB dB dB Condition T=25C, VD =5.5V, ICC =70mA 4 GENERAL PURPOSE AMPLIFIERS Frequency Range 3dB Bandwidth Gain Gain Flatness Noise Figure Input VSWR Output VSWR Output IP3 Output P1dB Reverse Isolation dB dB dBm dBm dB V mA Power Supply Device Operating Voltage Operating Current Freq=100MHz Freq=1000MHz Freq=2000MHz Freq=3000MHz Freq=4000MHz Freq=5000MHz Freq=6000MHz 100MHz to 2000MHz Freq=2000MHz In a 50 system, DC to 4000MHz In a 50 system, DC to 4000MHz Freq=1000MHz50kHz, PTONE =-10dBm Freq=1000MHz Freq=2000MHz With 22 bias resistor At pin 5 with ICC =70mA 4-138 Rev A5 010228 RF2333 Pin 1 2 3 Function GND GND RF IN Description Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Same as pin 1. RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Same as pin 1. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation: RF OUT Interface Schematic 4 5 GND RF OUT 4 RF IN Care should also be taken in the resistor selection to ensure that the current into the part never exceeds 120 mA over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.5V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Evaluation Board Schematic P1 P1-1 1 2 3 VCC GND NC 1 C1 100 pF 2 3 4 233X410- VCC P1-1 R1 22 L1 100 nH 5 C2 100 pF C3 100 pF C4 1 F 50 strip J2 RF OUT J1 RF IN 50 strip Rev A5 010228 4-139 GENERAL PURPOSE AMPLIFIERS ( V SUPPLY - V DEVICE ) R = -----------------------------------------------------I CC RF2333 Evaluation Board Layout Board Size 1" x 1" 4 GENERAL PURPOSE AMPLIFIERS 4-140 Rev A5 010228 RF2333 RF2333 Gainvs. FrequencyacrossTemperature Icc =70 mA 12.00 20.00 RF2333 Output P1dBvs. FrequencyacrossTemperature Icc=70mA 19.00 11.00 18.00 17.00 Output Power (dBm) 16.00 - 40 C 15.00 85 C 14.00 26 C 10.00 Gain (dB) -40 C 26 C 85 C 9.00 13.00 4 0.69 Frequency (GHz) 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00 8.00 12.00 11.00 7.00 0.10 0.69 Frequency (GHz) 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00 10.00 0.10 RF2333Output IP3vs. Frequency across Temperature Icc=70mA 38.00 12.00 RF2333 NoiseFigurevs. Frequency across Temperature Icc =70 mA 36.00 11.00 34.00 3rd Order Intercept Power (dBm) 10.00 32.00 Noise Figure (dB) 9.00 30.00 -40 C 26 C 28.00 8.00 85 C -40 C 26 C 85 C 26.00 7.00 24.00 6.00 22.00 20.00 0.10 0.69 Frequency (GHz) 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00 5.00 0.10 0.69 1.28 1.87 2.46 3.05 Frequency (GHz) 3.64 4.23 4.82 5.41 6.00 RF2333 Input VSWRvs. Frequency acrossTemperature Icc=70mA 2.50 2.50 RF2333 Output VSWRvs. Frequencyacross Temperature Icc =70 mA 2.00 2.00 VSWR 26 C 85 C VSWR -40 C -40 C 26 C 85 C 1.50 1.50 1.00 0.10 0.69 1.28 1.87 2.46 3.05 Frequency (GHz) 3.64 4.23 4.82 5.41 6.00 1.00 0.10 0.69 1.28 1.87 2.46 3.05 Frequency (GHz) 3.64 4.23 4.82 5.41 6.00 Rev A5 010228 4-141 GENERAL PURPOSE AMPLIFIERS RF2333 RF2333 Reverse Isolationvs. Frequencyacross Tem perature Icc=70mA 22.00 21.00 20.00 Reverse Isolation (dB) 19.00 -40 C 26 C 18.00 85 C 4 GENERAL PURPOSE AMPLIFIERS 16.00 15.00 0.10 0.69 Frequency (GHz) 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00 17.00 4-142 Rev A5 010228 |
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